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preliminary data this is preliminary information on a new product now in deve lopment or undergoing evaluation. details are subject to change without notice. may 2010 doc id 15576 rev 3 1/22 22 RHF330 rad-hard 1 ghz low noise operational amplifier features bandwidth: 1 ghz (gain = +2) slew rate: 1800 v/ s input noise: 1.3 nv/ hz distortion: sfdr = -78 dbc (10 mhz, 2 v pp ) 100 load optimized output stage 5 v power supply 300 krad mil-std-883 1019.7 eldrs free compliant sel immune at 125 c, let up to 110 mev.cm 2 /mg set characterized, let up to 110 mev.cm 2 /mg qmlv qualified under smd 5962-0723101 mass: 0.45 g applications communication satellites space data acquisition systems aerospace instrumentation nuclear and high energy physics harsh radiation environments adc drivers description the RHF330 is a current feedback operational amplifier that uses very high-speed complementary technology to provide a large bandwidth of 1 ghz in gains of 2 while drawing only 16.6 ma of quiescent current. the RHF330 also offers 0.1 db gain flatness up to 160 mhz with a gain of 2. with a slew rate of 1800 v/s and an output stage optimized for standard 100 loads, this device is highly suitable for applications where speed and low distortion are the main requirements. the device is a single operator available in a flat-8 hermetic ceramic package, saving board space as well as providing excellent thermal and dynamic performance. note: contact your st sales office for information on the specific conditions for products in die form and qml-q versions. pin connections (top view) nc +vcc nc out -vcc nc in - in + 1 4 8 5 table 1. device summary order code smd pin quality level package lead finish marking eppl packing RHF330k1 - engineering model flat-8 gold rhf310k1 - strip pack RHF330k-01v 5962f0723101vxc qmlv-flight flat-8 gold 5962f0723101vxc target strip pack www.st.com
contents RHF330 2/22 doc id 15576 rev 3 contents 1 absolute maximum ratings and operating conditions . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 demonstration board schematics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4 power supply considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.1 single power supply . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5 noise measurements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 5.1 measurement of the input voltage noise en . . . . . . . . . . . . . . . . . . . . . . . 15 5.2 measurement of the negative input current noise inn . . . . . . . . . . . . . . . 15 5.3 measurement of the positive input current noise inp . . . . . . . . . . . . . . . . 15 6 intermodulation distortion produc t . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 7 bias of an inverting amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 8 active filtering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 9 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 10 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
RHF330 absolute maximum ratings and operating conditions doc id 15576 rev 3 3/22 1 absolute maximum ratings and operating conditions table 2. absolute maximum ratings symbol parameter value unit v cc supply voltage (1) 1. all voltage values are measur ed with respect to the ground pin. 6v v id differential input voltage (2) 2. differential voltage is the non-inverting input termi nal with respect to the inverting input terminal. 0.5 v v in input voltage range (3) 3. the magnitude of input and output voltage must never exceed v cc +0.3 v. 2.5 v t stg storage temperature -65 to +150 c t j maximum junction temperature 150 c r thja flat-8 thermal resistance junction to ambient 50 c/w r thjc flat-8 thermal resistance junction to case 30 c/w p max flat-8 maximum power dissipation (4) (t amb = + 25 c) for t j =150c 4. short-circuits can cause excessive heating. destructive dissipation can result from sh ort-circuits on all amplifiers. 830 mw esd hbm: human body model (5) pins 1, 4, 5, 6, 7 and 8 pins 2 and 3 5. human body model: a 100 pf capacit or is charged to the specified voltage, then discharged through a 1.5 k resistor between two pins of the device. this is done for all couples of connected pin combinations while the other pins are floating. 2 0.6 kv mm: machine model (6) pins 1, 4, 5, 6, 7 and 8 pins 2 and 3 6. this is a minimum value. machine model: a 200 pf capacitor is charged to the specified voltage, then discharged directly between two pins of the device with no external series resistor (int ernal resistor < 5 ). this is done for all couples of connected pin combinations whil e the other pins are floating. 200 80 v cdm: charged device model (7) pins 1, 4, 5, 6, 7 and 8 pins 2 and 3 7. charged device model: all pins and package are ch arged together to the specified voltage and then discharged directly to ground through only one pin. 1.5 1 kv latch-up immunity 200 ma table 3. operating conditions symbol parameter value unit v cc supply voltage 4.5 to 5.5 v v icm common-mode input voltage -v cc +1.5 to +v cc -1.5 v t amb operating free-air temperature range (1) 1. tj must never exceed +150c. p = (tj - tamb)/rthja = (tj - tcase)/rthjc with p being the power that the RHF330 must dissipate in the application. -55 to +125 c
electrical characteristics RHF330 4/22 doc id 15576 rev 3 2 electrical characteristics table 4. electrical characteristics for v cc = 2.5 v, t amb =+25c (unless otherwise specified) symbol parameter test conditions temp. min. typ. max. unit dc performance v io input offset voltage +125c -3.1 +3.1 mv +25c -3.1 0.18 +3.1 -55c -3.1 +3.1 i ib+ non-inverting input bias current +125c 55 a +25c 26 55 -55c 55 i ib- inverting input bias current +125c 34 a +25c 7 22 -55c 34 cmr common mode rejection ratio 20 log ( v ic / v io ) v ic = 1 v +125c 48 db +25c 48 54 -55c 48 svr supply voltage rejection ratio 20 log ( v cc / v out ) v cc = 3.5 v to 5 v +125c 45 db +25c 60 74 -55c 45 psrr power supply rejection ratio 20 log ( v cc / v out ) v cc =200mv pp at 1khz +25c 56 db i cc supply current no load +125c 20.2 ma +25c 16.6 20.2 -55c 20.2 dynamic performance and output characteristics r ol transimpedance v out = 1 v, r l = 100 +125c 85 k +25c 104 153 -55c 85 bw -3 db bandwidth v out =20mv pp r l = 100 , a v = +2 +25c 1000 mhz r l = 100 , a v = -4 +125c 400 +25c 400 630 -55c 400 gain flatness at 0.1 db v out =20mv pp a v = +2, r l = 100 +25c 160
RHF330 electrical characteristics doc id 15576 rev 3 5/22 sr slew rate v out = 2 v pp , a v = +2, r l = 100 +25c 1800 v/ s v oh high level output voltage r l = 100 +125c 1.35 v +25c 1.5 1.64 -55c 1.35 v ol low level output voltage r l = 100 +125c -1.35 v +25c -1.55 -1.5 -55c -1.35 i out i sink (1) output to gnd +125c 360 ma +25c 360 453 -55c 360 i source (2) output to gnd +125c -320 +25c -320 -400 -55c -320 noise and distortion en equivalent input noise voltage (3) f = 100 khz +25c 1.3 nv/ hz in equivalent positive input noise current (3) f = 100 khz +25c 22 pa/ hz equivalent negative input noise current (3) f = 100 khz +25c 16 pa/ hz sfdr spurious free dynamic range a v = +2, v out = 2 v pp , r l = 100 dbc f = 10 mhz +25c -78 f = 20 mhz +25c -73 f = 100 mhz +25c -48 f = 150 mhz +25c -37 1. see figure 11 for more details. 2. see figure 10 for more details. 3. see chapter 5 on page 14 . table 4. electrical characteristics for v cc = 2.5 v, t amb =+25c (unless otherwise specified) (continued) symbol parameter test conditions temp. min. typ. max. unit table 5. closed-loop gain and feedback components gain (v/v) + 1 1 + 2- 2+ 4- 4+ 10- 10 r fb ( ) 300 270 300 270 240 240 200 200
electrical characteristics RHF330 6/22 doc id 15576 rev 3 figure 1. frequency response, positive gain fi gure 2. flatness, gain = +2 compensated 1m 10m 100m 1g -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 22 24 gain=1 gain=2 gain=4 small signal vcc=5v load=100 gain=10 gain (db) frequency (hz) 1m 10m 100m 1g 5.8 5.9 6.0 6.1 6.2 6.3 6.4 6.5 + - 300 300 0.5pf vin vout gain=+2, vcc=+5v, small signal 100 gain (db) frequency (hz) figure 3. flatness, gain = +4 compensated figure 4. flatness, gain = +10 compensated figure 5. quiescent current vs. v cc figure 6. positive slew rate 1m 10m 100m 1g 11.2 11.3 11.4 11.5 11.6 11.7 11.8 11.9 12.0 12.1 12.2 + - 82 240 2.7pf vin vout gain=+4, vcc=+5v, small signal 100 gain (db) frequency (hz) 1m 10m 100m 1g 19.3 19.4 19.5 19.6 19.7 19.8 19.9 20.0 20.1 20.2 20.3 + - 22 200 12pf vin vout gain=+10, vcc=+5v, small signal 100 gain (db) frequency (hz) 0.0 0.5 1.0 1.5 2.0 2.5 -20 -15 -10 -5 0 5 10 15 20 gain=+2 input to ground, no load icc (ma) icc(+) icc(-) +/- vcc (v) -2ns -1ns 0s 1ns 2ns 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 gain=+2 vcc=+5v load=100 output response (v) time (ns)
RHF330 electrical characteristics doc id 15576 rev 3 7/22 figure 7. negative slew rate figure 8. output amplitude vs. load -2ns -1ns 0s 1ns 2ns 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 gain=+2 vcc=+5v load=100 output response (v) time (ns) 10 100 1k 10k 100k 2.0 2.5 3.0 3.5 4.0 gain=+2 vcc=5v load=100 max. output amplitude (vp-p) load (ohms) figure 9. distortion vs. amplitude figure 10. i source hd3 hd2 gain=+2 vcc=+5v f=10mhz load=100 0.0 0.5 1.0 1.5 2.0 -600 -550 -500 -450 -400 - 3 50 - 3 00 -250 -200 -150 -100 -50 0 i s ource (ma) v (v) figure 11. i sink figure 12. noise figure -2.0 -1.5 -1.0 -0.5 0.0 0 50 100 150 200 250 3 00 3 50 400 450 500 550 600 i s ink (ma) v (v) vcc=5v
electrical characteristics RHF330 8/22 doc id 15576 rev 3 figure 13. input current noise vs. frequency figure 14. input voltage noise vs. frequency neg. current noise pos. current noise gain=14.1db rg=180ohms rfb=750ohms non-inverting input in short-circuit vcc=5v gain=37db rg=10ohms rfb=750ohms non-inverting input in short-circuit vcc=5v figure 15. reverse isolation vs. frequency figure 16. i out vs. temperature 1m 10m 100m 1g -100 -80 -60 -40 -20 0 small signal vcc=5v load=100 gain (db) frequency (hz) -40 -20 0 20 40 60 80 100 120 -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 2.0 output: short-circuit vcc=5v iout (a) isource isink temperature (c) figure 17. cmr vs. temperature figure 18. svr vs. temperature -40 -20 0 20 40 60 80 100 120 46 48 50 52 54 56 58 60 vcc=5v load=100 cmr (db) temperature (c) -40 -20 0 20 40 60 80 100 120 50 55 60 65 70 75 80 85 gain=+1 vcc=5v load=100 svr (db) temperature (c)
RHF330 electrical characteristics doc id 15576 rev 3 9/22 figure 19. r ol vs. temperature figure 20. v oh and v ol vs. temperature -40 -20 0 20 40 60 80 100 120 80 100 120 140 160 180 open loop vcc=5v r ol (m ) temperature (c) -40-20 0 20406080 -4 -3 -2 -1 0 1 2 gain=+2 vcc=5v load=100 v ol v oh v oh & ol (v) temperature (c) figure 21. i bias vs. temperature figure 22. i cc vs. temperature figure 23. v io vs. temperature -40 -20 0 20 40 60 80 100 120 6 8 10 12 14 16 18 20 22 24 26 28 30 vcc=5v load=100 i bias ( a) ib(+) ib(?) temperature (c) -40 -20 0 20 40 60 80 100 120 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 gain=+2 vcc=5v no load in+/in- to gnd icc(+) icc(-) temperature ( c) i cc (ma) -40 -20 0 20 40 60 80 100 120 0 200 400 600 800 1000 open loop vcc=5v load=100 temperature ( c) v io (micro v)
demonstration board schematics RHF330 10/22 doc id 15576 rev 3 3 demonstration board schematics figure 24. electrical schematics (inverti ng and non-inverting gain configurations) figure 25. rhf3xx demonstration board
RHF330 demonstration board schematics doc id 15576 rev 3 11/22 figure 26. top view layout figure 27. bottom view layout
power supply considerations RHF330 12/22 doc id 15576 rev 3 4 power supply considerations correct power supply bypassing is very important for optimizing performance in high- frequency ranges. the bypass capacitors should be placed as close as possible to the ic pins to improve high-frequency bypassing. a capacitor greater than 1 f is necessary to minimize the distortion. for better quality bypassing, a 10 nf capacitor can be added. it should also be placed as close as possible to the ic pins. the bypass capacitors must be incorporated for both the negative and the positive supply. for example, on the rhf3xx single op-amp demonstration board, these capacitors are c6, c7, c8, c9. figure 28. circuit for power supply bypassing 4.1 single power supply in the event that a single supply system is us ed, biasing is necessary to obtain a positive output dynamic range between 0 v and +v cc supply rails. considering the values of v oh and v ol , the amplifier provides an output swing from +0.9 v to +4.1 v on a 100 load. the amplifier must be biased wit h a mid-supply (nominally +v cc /2), in order to maintain the dc component of the signal at this value. several options are possible to provide this bias supply, such as a virtual ground using an operational amplifier or a two-resistance divider (which is the cheapest solution). a high resistance value is required to limit the current consumption. on the other hand, the current must be high enough to bias the non-inverting input of the amplifier. if we consider this bias current (55 a maximum) as 1% of the current through the resistance divider, to keep a stable mid-supply, two resistances of 470 can be used. the input provides a high-pass filter with a break frequency below 10 hz which is necessary to remove the original 0 v dc component of the input signal, and to set it at +v cc /2. figure 29 on page 13 illustrates a 5 v single power supp ly configuration for the rhf3xx single op-amp demonstration board. + +v cc 10 f + 10 nf 10 f + 10 nf - -v cc am00 83 5
RHF330 power supply considerations doc id 15576 rev 3 13/22 a capacitor c g is added in the gain network to ensure a unity gain at low frequencies to keep the right dc component at the output. c g contributes to a high-pass filter with r fb //r g and its value is calculated with regard to the cut-off frequency of this low-pass filter. figure 29. circuit for +5 v single supply + _ r2 470 r g in +5 v 100 out r f b 10 f + 1 f 100 f r1 470 +5 v 10 nf r in 1 k c g + am00 83 6
noise measurements RHF330 14/22 doc id 15576 rev 3 5 noise measurements the noise model is shown in figure 30 . en: input voltage noise of the amplifier inn: negative input current noise of the amplifier inp: positive input current noise of the amplifier figure 30. noise model the thermal noise of a resistance r is: where f is the specified bandwidth. on a 1 hz bandwidth the thermal noise is reduced to: where k is the boltzmann's constant, equal to 1,374.e(-23)j/k. t is the temperature (k). the output noise eno is calculated using the superposition theorem. however, eno is not the simple sum of all noise sources but rather the square root of the sum of the square of each noise source, as shown in equation 1 . equation 1 + _ r 3 r1 o u tp u t r2 in - in + hp 3 577 inp u t noi s e: 8 nv/ hz n1 n2 n 3 en am00 83 7 4ktr f 4ktr eno v1 2 v2 2 v3 2 v4 2 v5 2 v6 2 +++++ =
RHF330 noise measurements doc id 15576 rev 3 15/22 equation 2 the input noise of the instrumentation must be extracted from the measured noise value. the real output noise value of the driver is: equation 3 the input noise is called equivalent input noise because it is not directly measured but is evaluated from the measurement of the output divided by the closed loop gain (eno/g). after simplification of the fourth and the fifth term of equation 2 we obtain: equation 4 5.1 measurement of the input voltage noise en if we assume a short-circuit on the non-inverting input (r3=0), from equation 4 we can derive: equation 5 to easily extract the value of en, the resistance r2 is as low as possible. on the other hand, the gain must be large enough. r3=0, gain: g=100 5.2 measurement of the negative input current noise inn to measure the negative input current noise inn, we set r3=0 and use equation 5 . this time, the gain must be lower to decrease the thermal noise contribution. r3=0, gain: g=10 5.3 measurement of the positive input current noise inp to extract inp from equation 3 , a resistance r3 is connected to the non-inverting input. the value of r3 must be chosen so that its thermal noise contribution is as low as possible against the inp contribution. r3=100 w, gain: g=10 eno 2 en 2 g 2 inn 2 r2 2 inp 2 + + r3 2 g 2 r2 r1 ------- - 2 4ktr1 4ktr2 1 r2 r1 ------- - + 2 4ktr3 ++ + = eno measured () 2 instrumentation () 2 ? = eno 2 en 2 g 2 inn 2 r2 2 inp 2 + + r3 2 g 2 g4ktr21 r2 r1 ------- - + 2 4ktr3 + + = eno en 2 g 2 inn 2 r2 2 g4ktr2 + + =
intermodulation distortion product RHF330 16/22 doc id 15576 rev 3 6 intermodulation distortion product the non-ideal output of the amplifier can be described by the following series of equations. where the input is v in =asin t, c 0 is the dc component, c 1 (v in ) is the fundamental and c n is the amplitude of the harmonics of the output signal v out . a one-frequency (one-tone) input signal contributes to harmonic distortion. a two-tone input signal contributes to harmonic distortion and to the intermodulation product. the study of the intermodulation and distortion for a two-tone input signal is the first step in characterizing the driving capab ility of multi-tone input signals. in this case: then: from this expression, we can extract the distortion terms and the intermodulation terms from a single sine wave. second order intermodulation terms im2 by the frequencies ( 1 - 2 ) and ( 1 + 2 ) with an amplitude of c2a 2 . third order intermodulation terms im3 by the frequencies (2 1 - 2 ), (2 1 + 2 ), ( ? 1 +2 2 ) and ( 1 + 2 2 ) with an amplitude of (3/4)c3a 3 . the intermodulation product of the driver is measured by using the driver as a mixer in a summing amplifier configuration ( figure 31 on page 17 ). in this way, the non-linearity problem of an external mixing device is avoided. v out c 0 c 1 v in c 2 v 2 in c + n v n in ++ + = v in a 1 t sin a 2 t sin + = v out c 0 c 1 a 1 t sin a 2 t sin + () c 2 a 1 t sin a 2 t sin + () 2 c n a 1 t sin a 2 t sin + () n ++ + =
RHF330 intermodulation distortion product doc id 15576 rev 3 17/22 figure 31. inverting summing amplifier + _ r r f b 100 v o u t r 2 v in2 v in1 r 1 am00 838
bias of an inverting amplifier RHF330 18/22 doc id 15576 rev 3 7 bias of an inverting amplifier a resistance is necessary to achieve good input biasing, such as resistance r shown in figure 32 . the value of this resistance is calculated from the negative and positive input bias current. the aim is to compensate for the offset bias current, which can affect the input offset voltage and the output dc component. assuming i ib- , i ib+ , r in , r fb and a zero volt output, the resistance r is: figure 32. compensation of the input bias current r r in r fb r in r + fb ------------------------ = r lo a d o u tp u t r f b r in i i b - i i b + v cc + v cc - + _ am00 83 9
RHF330 active filtering doc id 15576 rev 3 19/22 8 active filtering figure 33. low-pass active filtering, sallen-key from the resistors r fb and r g we can directly calculate the gain of the filter in a classic non- inverting amplificat ion configuration. we assume the following expression is the response of the system. the cut-off frequency is not gain-dependent and so becomes: the damping factor is calculated by the following expression. the higher the gain, the more sensitive the damping factor is. when the gain is higher than 1, it is preferable to use very stable resistor and capacitor values. in the case of r1=r2=r: due to a limited selection of c apacitor values in comparison with the resistors, we can set c1=c2=c, so that: + _ r g in r f b 100 out r 1 r 2 c2 c1 am00 8 40 a v g1 r fb r g -------- + == t j vout j vin j ---------------- - g 12 j c ----- j () 2 c 2 ----------- - ++ ---------------------------------------- - == c 1 r1r2c1c2 ------------------------------------ - = 1 2 -- - c c 1 r 1 c 1 r 2 c 2 r 1 c 1 r 1 g ? ++ () = 2c 2 c 1 r fb r g -------- ? 2c 1 c 2 -------------------------------- - = 2r 2 r 1 r fb r g -------- ? 2r 1 r 2 -------------------------------- - =
package information RHF330 20/22 doc id 15576 rev 3 9 package information in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. figure 34. ceramic flat-8 package mechanical drawing table 6. ceramic flat-8 package mechanical data ref. dimensions millimeters inches min. typ. max. min. typ. max. a 2.24 2.44 2.64 0.088 0.096 0.104 b 0.38 0.43 0.48 0.015 0.017 0.019 c 0.10 0.13 0.16 0.004 0.005 0.006 d 6.35 6.48 6.61 0.250 0.255 0.260 e 6.35 6.48 6.61 0.250 0.255 0.260 e2 4.32 4.45 4.58 0.170 0.175 0.180 e3 0.88 1.01 1.14 0.035 0.040 0.045 e 1.27 0.050 l 3.00 0.118 q 0.66 0.79 0.92 0.026 0.031 0.092 s1 0.92 1.12 1.32 0.036 0.044 0.052 n08 08
RHF330 revision history doc id 15576 rev 3 21/22 10 revision history table 7. document revision history date revision changes 20-may-2009 1 initial release. 04-may-2010 2 modified temperature limits in ta b l e 4 . changed order codes in ta b l e 7 . 27-may-2010 3 added mass in features on cover page. added full ordering information in ta b l e 1 .
RHF330 22/22 doc id 15576 rev 3 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2010 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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